PART |
Description |
Maker |
MHPM7B12A120A_D ON1960 |
12 AMP, 1200 VOLT HYBRID POWER MODULE From old datasheet system
|
ON Semi
|
MSK4304U MSK4303HU MSK4304D MSK4304ED MSK4304ES MS |
10 AMP, 75 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID
|
MSK[M.S. Kennedy Corporation]
|
SHD724502 |
1200 VOLT 35 AMP IGBT DEVICE
|
Sensitron
|
APT26F120L APT26F120B2 APT26F120B209 |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel FREDFET
|
Microsemi, Corp. Microsemi Corporation
|
SJL-115 |
180o HYBRID WIDE BANDWIDTH 200 - 1200 MHz 180ì HYBRID WIDE BANDWIDTH 200 - 1200 MHz
|
SYNERGY MICROWAVE CORPORATION
|
CS48-35N CS48-35D CS48-35M CS48-35P CS48-35PB CS48 |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-48
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
CS3P-40B CS3P-40P CS3P-40PB CS3P-40N CS3P-40M CS3P |
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1200 V, SCR ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1000 V, SCR ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 400 V, SCR ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 200 V, SCR ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 600 V, SCR
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
STK-457 STK-459 STK-460 STK-461 STK-463 STK-465 ST |
Thick Film Hybrid IC(2 Power 2 Channel 10 to 30 W, AF Power AMP) 厚膜混合集成电路电源频道1030瓦,自动对焦功率放大器)
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
NTE1320 |
Integrated Circuit Module, Hybrid, Audio Power Amp, 25W, 2 Power Supplies Required
|
NTE[NTE Electronics]
|
1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR 370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V. Microsemi Corporation
|
STK084G |
-50V; 7A; ; thick hybrid IC. 50W AF power Amp
|
SANYO
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
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